P-doping mechanisms in catalyst-free gallium arsenide nanowires.

Direct imaging of single Au atoms within GaAs nanowires.

Incorporation of catalyst atoms during the growth process of semiconductor nanowires reduces the electron mean free path and degrades their electronic properties. Aberration-corrected scanning transmission electron microscopy (STEM) is now capable of directly imaging single Au atoms within the dense matrix of a GaAs crystal, by slightly tilting the GaAs lattice planes with respect to the incide...

Doping of Vapor–Liquid–Solid Grown Gallium Arsenide Nanowires

ii Abstract (in Finnish) iiiin Finnish) iii

Te-doping of self-catalyzed GaAs nanowires

Towards controlled Doping in III-V Semiconductor Nanowires

Nanowires are quasi-one-dimensional single crystals with lateral dimensions that can be scaled-down to only a few nanometers. They can simultaneously act as active components and interconnects and therefore fulfill the two basic functions of any active device. However, controlled doping of III-V nanowires is challenging due to strong Fermi-level pinning as well as the kinetic and thermodynamic ...

A review of the electrical properties of semiconductor nanowires: insights gained from terahertz conductivity spectroscopy

Accurately measuring and controlling the electrical properties of semiconductor nanowires is of paramount importance in the development of novel nanowire-based devices. In light of this, terahertz(THz) conductivity spectroscopy has emerged as an ideal non-contact technique for probing nanowire electrical conductivity and is showing tremendous value in the targeted development of nanowire devic...